基本信息:
- 专利标题： CHARGE DISSIPATIVE DIELECTRIC FOR CRYOGENIC DEVICES
- 专利标题（中）：用于低温装置的充电电介质
- 申请号：PCT/US2004034899 申请日：2004-10-20
- 公开(公告)号：WO2005041264A3 公开(公告)日：2006-01-12
- 发明人： CANTOR ROBIN HAROLD , HALL JOHN ADDISON
- 申请人： STAR CRYOELECTRONICS LLC , CANTOR ROBIN HAROLD , HALL JOHN ADDISON
- 专利权人： STAR CRYOELECTRONICS LLC,CANTOR ROBIN HAROLD,HALL JOHN ADDISON
- 当前专利权人： STAR CRYOELECTRONICS LLC,CANTOR ROBIN HAROLD,HALL JOHN ADDISON
- 优先权： US51374703 2003-10-23; US97053904 2004-10-20
- 主分类号： H01B1/00
- IPC分类号： H01B1/00 ; H01L20060101 ; H01B12/00 ; B32B9/00 ; B32B15/04 ; H01L31/113 ; H01L39/00
摘要：
A Superconducting Quantum Interference Device (SQUID) is disclosed comprising a pair of resistively shunted Josephson junctions connected in parallel within a superconducting loop and biased by an external direct current (dc) source. The SQUID comprises a semiconductor substrate and at least one superconducting layer. The metal layer(s) are separated by or covered with a semiconductor material layer having the properties of a conductor at room temperature and the properties of an insulator at operating temperatures (generally less than 100 Kelvins). The properties of the semiconductor material layer greatly reduces the risk of electrostatic discharge that can damage the device during normal handling of the device at room temperature, while still providing the insulating properties desired to allow normal functioning of the device at its operating temperature. A method of manufacturing the SQUID device is also disclosed.
摘要（中）：
公开了一种超导量子干涉装置（SQUID），其包括在超导环路内并联并由外部直流（dc）源偏置的一对电阻分流的约瑟夫逊结。 SQUID包括半导体衬底和至少一个超导层。 金属层由在室温下具有导体性质的半导体材料层和在工作温度（通常小于100Kelvins）下的绝缘体的性能分开或覆盖。 半导体材料层的性质大大降低了静电放电的风险，这可能在室温正常处理器件期间损坏器件，同时仍然提供所需的绝缘性能以允许器件在其工作温度下正常工作。 还公开了制造SQUID器件的方法。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01B | 电缆；导体；绝缘体；导电、绝缘或介电材料的选择 |
| ------H01B1/00 | 按导电材料特性区分的导体或导电物体；用作导体的材料选择 |