发明申请
WO2004105090A2 STRUCTURE AND METHOD FOR FORMING A TRENCH MOSFET HAVING SELF-ALIGNED FEATURES
审中-公开
基本信息:
- 专利标题： STRUCTURE AND METHOD FOR FORMING A TRENCH MOSFET HAVING SELF-ALIGNED FEATURES
- 专利标题（中）：用于形成具有自对准特征的TRENCH MOSFET的结构和方法
- 申请号：PCT/US2004015059 申请日：2004-05-14
- 公开(公告)号：WO2004105090A2 公开(公告)日：2004-12-02
- 发明人： HERRICK ROBERT , LOSEE BECKY , PROBST DEAN
- 申请人： FAIRCHILD SEMICONDUCTOR , HERRICK ROBERT , LOSEE BECKY , PROBST DEAN
- 专利权人： FAIRCHILD SEMICONDUCTOR,HERRICK ROBERT,LOSEE BECKY,PROBST DEAN
- 当前专利权人： FAIRCHILD SEMICONDUCTOR,HERRICK ROBERT,LOSEE BECKY,PROBST DEAN
- 优先权： US44267003 2003-05-20
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/417 ; H01L29/78 ; H01L
摘要：
In accordance with an embodiment of the present invention, a semiconductor device is formed as follows. An exposed surface area of a silicon layer where silicon can be removed is defined. A portion of the silicon layer is removed to form a middle section of a trench extending into the silicon layer from the exposed surface area of the silicon layer. Additional exposed surface areas of the silicon layer where silicon can be removed are defined. Additional portions of the silicon layer are removed to form outer sections of the trench such that the outer sections of the trench extend into the silicon layer from the additional exposed surface areas of the silicon layer. The middle section of the trench extends deeper into the silicon layer than the outer sections of the trench.
摘要（中）：
根据本发明的实施例，半导体器件如下形成。 定义可以除去硅的硅层的暴露的表面积。 去除硅层的一部分以形成从硅层的暴露的表面区域延伸到硅层中的沟槽的中间部分。 定义可以除去硅的硅层的额外暴露表面积。 去除硅层的附加部分以形成沟槽的外部部分，使得沟槽的外部部分从硅层的附加暴露表面区域延伸到硅层中。 沟槽的中间部分比沟槽的外部部分更深地延伸到硅层中。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/335 | .....场效应晶体管 |
| ------------------H01L21/336 | ......带有绝缘栅的 |