发明申请
WO2004031425A1 METHOD FOR PRODUCING A SINTERED, SUPPORTED POLYCRYSTALLINE DIAMOND COMPACT
审中-公开
基本信息:
- 专利标题： METHOD FOR PRODUCING A SINTERED, SUPPORTED POLYCRYSTALLINE DIAMOND COMPACT
- 专利标题（中）：用于生产烧结的，支撑的多晶金刚石紧固件的方法
- 申请号：PCT/US2003/028536 申请日：2003-09-11
- 公开(公告)号：WO2004031425A1 公开(公告)日：2004-04-15
- 发明人： RAGHAVAN, Ram , MCHALE, James, Michael, Jr. , SCURLOCK, Robert, Dean
- 申请人： GENERAL ELECTRIC COMPANY
- 申请人地址： 1 River Road, Schenectady, NY 12345 US
- 专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人地址： 1 River Road, Schenectady, NY 12345 US
- 代理机构： GNIBUS, Michael
- 优先权： US60/414,987 200201001; US10/621,710 20030717
- 主分类号： C22C26/00
- IPC分类号： C22C26/00
摘要：
A sintered supported polycrystalline diamond compact (PCD) having improved abrasion resistance properties is manufactured by subjecting diamond crystals placed in adjacency with a metal carbide support containing a catalyst/sintering aid to high pressure/high temperature (HP/HT) processing. Said PCD compact comprises: a) a body of diamond crystals comprising a mixture of about 60 wt.% to about 90 wt.% of coarse fraction having an average particle size ranging from about 15 to 70 µm and a fine fraction being about not substantially greater than about onr half of the average particle size of said coarse fraction; and b) a support body comprising about 20 vol. % or less of a catalyst/sintering aid.
摘要（中）：
具有改善耐磨性的烧结的支撑多晶金刚石复合体（PCD）通过将与含有催化剂/烧结助剂的金属碳化物载体邻接放置的金刚石晶体进行高压/高温（HP / HT）处理来制造。 所述PCD压块包括：a）金刚石晶体体，其包含约60重量％至约90重量％的平均粒度为约15至70μm的粗部分的混合物，并且细小部分基本上不大致 大于所述粗级分的平均粒度的约一半; 和b）包含约20体积％ ％以下的催化剂/烧结助剂。