发明申请
WO2004030080A1 A HOLLOW MICROPROBE USING A MEMS TECHNIQUE AND A METHOD OF MANUFACTURING THE SAME
审中-公开
基本信息:
- 专利标题: A HOLLOW MICROPROBE USING A MEMS TECHNIQUE AND A METHOD OF MANUFACTURING THE SAME
- 专利标题(中):使用MEMS技术的中空麦克风及其制造方法
- 申请号:PCT/KR2003/001414 申请日:2003-07-16
- 公开(公告)号:WO2004030080A1 公开(公告)日:2004-04-08
- 发明人: LEE, Oug-ki
- 申请人: PHICOM CORPORATION , LEE, Oug-ki
- 申请人地址: 60-29, Gasan-dong, Kumchon-gu, Seoul 153-801 KR
- 专利权人: PHICOM CORPORATION,LEE, Oug-ki
- 当前专利权人: PHICOM CORPORATION,LEE, Oug-ki
- 当前专利权人地址: 60-29, Gasan-dong, Kumchon-gu, Seoul 153-801 KR
- 代理机构: KIM, Inhan
- 优先权: KR10-2002-0058021 20020925
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
The present invention relates to a hollow microprobe using an MEMS technique and a method of manufacturing the same. A method of manufacturing a hollow microprobe using an MEMS technique according to the present invention comprises: a step of forming a protection film pattern on a substrate; a step of forming a through hole on the substrate using the protection film pattern as a mask; a step of forming a seed layer on the upper portion of the protection film pattern of the substrate provided with the through hole and an inside wall of the through hole; a step of removing the seed layer of the upper portion of the substrate and the protection film to remain the seed layer only in the inside surface of the though hole, a step of forming a buried conductor within the through of the substrate by an electroplating method; a step of planarizing the top surface of the substrate provided with the buried conductor; a step of forming a base conductive film on the substrate which its top surface is planarized; a step of forming a first tip supporter on the substrate provided with the base conductive film and having a oblique surface sloping down; a step of rounding the top surface of the first tip supporter; a step of forming a second tip supporter; a step of forming a second tip supporter on the outside surface of the first tip supporter to open the top surface of the first tip supporter; a step of forming a conductive material tip on the outside surface of the second tip supporter; and a step of removing the top surface of the opened first tip supporter with a predetermined depth.
摘要(中):
本发明涉及使用MEMS技术的中空微探针及其制造方法。 使用根据本发明的MEMS技术制造中空微探针的方法包括:在衬底上形成保护膜图案的步骤; 使用保护膜图案作为掩模在基板上形成通孔的步骤; 在设置有通孔的基板和通孔的内壁的保护膜图案的上部上形成种子层的步骤; 除去基板的上部的种子层和保护膜的步骤仅在通孔的内表面中保留种子层,通过电镀法在基板的通孔内形成掩埋导体的步骤 ; 平面化设置有掩埋导体的衬底的顶表面的步骤; 在基板上形成基底导电膜的步骤,其顶面被平坦化; 在设置有基底导电膜的基板上形成第一末端支撑体并具有向下倾斜的倾斜面的步骤; 使所述第一尖端支撑件的顶面倒圆的步骤; 形成第二尖端支撑件的步骤; 在第一末端支撑体的外表面上形成第二末端支撑件以打开第一末端支撑件的顶表面的步骤; 在第二末端支撑体的外表面上形成导电材料尖端的步骤; 以及以预定深度去除所述打开的第一末端支撑件的顶表面的步骤。
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/66 | .在制造或处理过程中的测试或测量 |