发明申请
WO2002061844A1 CORRELATED CHARGE TRANSFER DEVICE AND A METHOD OF FABRICATING A CORRELATED CHARGE TRANSFER DEVICE
审中-公开
基本信息:
- 专利标题： CORRELATED CHARGE TRANSFER DEVICE AND A METHOD OF FABRICATING A CORRELATED CHARGE TRANSFER DEVICE
- 专利标题（中）：相关的电荷转移装置和一种制造相关电荷转移装置的方法
- 申请号：PCT/GB2001/002190 申请日：2001-05-17
- 公开(公告)号：WO2002061844A1 公开(公告)日：2002-08-08
- 发明人： KAMIYA, Toshio , DURRANI, Zahid, Ali, Khan , TAN, Yong, Tong , AHMED, Haroon , MIZUTA, Hiroshi , FURUTA, Yoshikazu
- 申请人： JAPAN SCIENCE AND TECHNOLOGY CORPORATION , HITACHI EUROPE LIMITED , CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LTD. , KAMIYA, Toshio , DURRANI, Zahid, Ali, Khan , TAN, Yong, Tong , AHMED, Haroon , MIZUTA, Hiroshi , FURUTA, Yoshikazu
- 申请人地址： Kawaguchi Center Building, 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012 JP
- 专利权人： JAPAN SCIENCE AND TECHNOLOGY CORPORATION,HITACHI EUROPE LIMITED,CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LTD.,KAMIYA, Toshio,DURRANI, Zahid, Ali, Khan,TAN, Yong, Tong,AHMED, Haroon,MIZUTA, Hiroshi,FURUTA, Yoshikazu
- 当前专利权人： JAPAN SCIENCE AND TECHNOLOGY CORPORATION,HITACHI EUROPE LIMITED,CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LTD.,KAMIYA, Toshio,DURRANI, Zahid, Ali, Khan,TAN, Yong, Tong,AHMED, Haroon,MIZUTA, Hiroshi,FURUTA, Yoshikazu
- 当前专利权人地址： Kawaguchi Center Building, 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012 JP
- 代理机构： VENNER, SHIPLEY & CO.
- 优先权： EP01300880.0 20010131
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A single-electron transistor (1) has a point-contact channel (2) and side gates (5) formed in a granular layer (6). The granular layer is fabricated by depositing a nanocrystalline silicon layer (6') using plasma-enhanced chemical vapour deposition (PECVD), carrying out oxidation in dry oxygen at 750 °C and performing an anneal in argon at 1000 °C. The granular layer comprises crystallinreconductive regions (8) and amorphous insulating regions (10), wherein the amorphous region forms a tunnel barrier with a height greater than 100 meV. The single-electron transistor exhibits Coulomb blockade at room temperature.
摘要（中）：
单电子晶体管（1）具有形成在粒状层（6）中的点接触沟道（2）和侧栅极（5）。 通过使用等离子体增强化学气相沉积（PECVD）沉积纳米晶硅层（6'），在750℃的干燥氧气中进行氧化并在1000℃的氩气中进行退火来制造颗粒层。颗粒层 包括晶状体导电区域（8）和非晶绝缘区域（10），其中非晶区域形成高度大于100meV的隧道势垒。 单电子晶体管在室温下表现出库仑阻滞。