发明申请
WO0163709A3 SEMICONDUCTOR COMPONENT FOR THE EMISSION OF ELECTROMAGNETIC RADIATION AND METHOD FOR PRODUCTION THEREOF
审中-公开
基本信息:
- 专利标题： SEMICONDUCTOR COMPONENT FOR THE EMISSION OF ELECTROMAGNETIC RADIATION AND METHOD FOR PRODUCTION THEREOF
- 专利标题（中）：半导体部件的电磁辐射，为发射和方法及其
- 申请号：PCT/DE0100706 申请日：2001-02-23
- 公开(公告)号：WO0163709A3 公开(公告)日：2002-03-14
- 发明人： LELL ALFRED , LUFT JOHANN , HAERLE VOLKER , HAHN BERTHOLD
- 申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LELL ALFRED , LUFT JOHANN , HAERLE VOLKER , HAHN BERTHOLD
- 专利权人： OSRAM OPTO SEMICONDUCTORS GMBH,LELL ALFRED,LUFT JOHANN,HAERLE VOLKER,HAHN BERTHOLD
- 当前专利权人： OSRAM OPTO SEMICONDUCTORS GMBH,LELL ALFRED,LUFT JOHANN,HAERLE VOLKER,HAHN BERTHOLD
- 优先权： DE10008584 2000-02-24
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01S5/20 ; H01S5/22 ; H01S5/223 ; H01S5/323 ; H01S5/343
摘要：
According to the invention, a semiconductor component is produced for the emission of electromagnetic radiation, in particular, light, which is characterised by comprising an active layer for production of radiation, a p contact, electrically connected to the active layer, an n contact, electrically connected to the active layer and a current limiting structure for the definition of a current path, whereby the current limiting structure is provided between the n contact and the active layer.
摘要（中）：
根据本发明，用于电磁辐射的发射的半导体器件，特别是光，提供了具有以下特征; 用于产生辐射的有源层，其导电地连接到所述有源层的p接触，n接触，其导电地连接到所述有源层，以及用于限定的电流路径的电流限制结构，所述n个之间的电流限制结构 - 接触并且被设置在活性层。