基本信息:
- 专利标题： METHOD OF MANUFACTURING A MAGNETIC TUNNEL JUNCTION DEVICE
- 专利标题（中）：制造磁性隧道连接装置的方法
- 申请号：PCT/EP2000/006817 申请日：2000-07-17
- 公开(公告)号：WO01008176A1 公开(公告)日：2001-02-01
- 主分类号： G11C11/14
- IPC分类号： G11C11/14 ; G01R33/09 ; G11B5/31 ; G11B5/39 ; G11C11/15 ; H01F10/32 ; H01F41/30 ; H01F41/32 ; H01L21/8246 ; H01L27/105 ; H01L43/08 ; H01L43/12
摘要：
A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two electrode layers (3, 7) and a barrier layer (5) extending in between is formed. One of the electrode layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer (7r) remains. This rest layer is subsequently removed by means of physical etching, in which at least substantially charged particles have a motion energy which is between the sputtering threshold of the magnetic material of the rest layer and the sputtering threshold of the non-magnetic material of the barrier layer. In the relevant method, it is prevented that the electrode layer which is not to be structured is detrimentally influenced during structuring of the other electrode layer.
摘要（中）：
一种制造磁性隧道结器件的方法，其中形成了包括两个电极层（3,7）和在其间延伸的阻挡层（5）的叠层（1）。 电极层中的一个通过蚀刻来构造，其中在蚀刻期间，通过去除材料使该层的一部分变薄，直到保持层（7r）保留。 随后通过物理蚀刻去除该静止层，其中至少基本上带电的颗粒具有位于其余层的磁性材料的溅射阈值和阻挡层的非磁性材料的溅射阈值之间的运动能量 层。 在相关方法中，防止在另一电极层的结构化期间不被构造的电极层受到不利影响。