基本信息:
- 专利标题： PROCESS FOR THE PURIFICATION OF ELECTROLYTE COMPONENTS
- 专利标题（中）：电解质组分的纯化方法
- 申请号：PCT/GB1993000946 申请日：1993-05-07
- 公开(公告)号：WO1993024962A1 公开(公告)日：1993-12-09
- 发明人： BP SOLAR LIMITED
- 申请人： BP SOLAR LIMITED , BARKER, Jeremy , MARSHALL, Rodney, John , SADEGHI, Mehran
- 专利权人： BP SOLAR LIMITED,BARKER, Jeremy,MARSHALL, Rodney, John,SADEGHI, Mehran
- 当前专利权人： BP SOLAR LIMITED,BARKER, Jeremy,MARSHALL, Rodney, John,SADEGHI, Mehran
- 优先权： GB9210945.3 19920522
- 主分类号： H01L31/18
- IPC分类号： H01L31/18
摘要：
A method of preparing an aqueous solution of a Group IIB metal salt suitable for use in the electrodeposition of a IIB/VIB thin film semiconductor which comprises (a) bringing a solution of the Group IIB metal salt into contact with the corresponding IIB metal in the form of a powder with a purity greater than 99.99 %; (b) agitating the solution containing the powder for at least 10 minutes; and (c) removing the metal powder from the solution. A method of preparing an electrodeposited thin film IIB/VIB semiconductor by cathodic deposition from an electrolyte containing ions of Group II metal, is also claimed.
摘要（中）：
一种制备适用于IIB / VIB薄膜半导体的电沉积的IIB族金属盐水溶液的方法，该方法包括（a）使IIB族金属盐溶液与相应的IIB金属接触， 形式的纯度大于99.99％的粉末; （b）搅拌含有粉末的溶液至少10分钟; 和（c）从溶液中除去金属粉末。 还要求保护由含有II族金属的离子的电解质通过阴极沉积制备电沉积薄膜IIB / VIB半导体的方法。