In one embodiment of the invention, a CMOS device (32) inverts an input signal and provides this inverted input signal into the base of an NPN bipolar transistor (Q3) whose collector is coupled to a positive power supply voltage. The input signal coupled to the input of the CMOS device is also coupled to the gate of a large N-channel MOSFET (Q4) having its drain coupled to the emitter of the bipolar transistor and its source coupled to ground. The common node (36) of the bipolar transistor and the N-channel MOSFET provides the output signal of the driver. This driver uses much less area than a standard two-bipolar transistor BiCMOS driver with substantially equal performance.