基本信息:
- 专利标题： Operational amplifier
- 专利标题（中）：运算放大器
- 申请号：US11511333 申请日：2006-08-29
- 公开(公告)号：US07391263B2 公开(公告)日：2008-06-24
- 发明人： Masayuki Koizumi , Hiroyuki Shibayama
- 申请人： Masayuki Koizumi , Hiroyuki Shibayama
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2005-249442 20050830
- 主分类号： H03F3/45
- IPC分类号： H03F3/45
摘要：
An operational amplifier 1 is provided with differential amplifier 2, replica amplifier 3, voltage-current converting circuit 4, reference current source 5 and comparator 6. Differential amplifier 2 includes P-channel MOS transistors PT1 and PT2, gate and drain electrodes of which are connected to each other to function as loads, and N-channel MOS transistors NT1, NT2 and NT3. Replica amplifier 3 is identical in structure to differential amplifier and also includes P-channel MOS transistors PT11 and PT12, gate and drain electrodes of which are connected to each other to function as loads, and N-channel MOS transistors NT11, NT12 and NT13. Voltage-current converting circuit 4 converts output voltages of replica amplifier 3 to current Irep. Comparator 6 compares output current Irep of voltage-current converting circuit 4 with reference current Iref of reference current source 5 and supplies compared current Ico to differential amplifier 2 to keep bias current Ibias of differential amplifier 2 constant.
摘要（中）：
运算放大器1设置有差分放大器2，复制放大器3，电压电流转换电路4，参考电流源5和比较器6。 差分放大器2包括P沟道MOS晶体管PT 1和PT 2，栅极和漏极彼此连接起来用作负载，N沟道MOS晶体管NT1，NT2和NT3。 复制放大器3在结构上与差分放大器相同，并且还包括P沟道MOS晶体管PT 11和PT 12，栅极和漏极彼此连接以用作负载，并且N沟道MOS晶体管NT 11，NT 12和NT 13。 电压电流转换电路4将复制放大器3的输出电压转换为电流Irep。 比较器6将电压 - 电流转换电路4的输出电流Irep与参考电流源5的参考电流Iref进行比较，并将比较电流Ico提供给差分放大器2，以保持差分放大器2的偏置电流Ibias恒定。
公开/授权文献:
- US20070057724A1 Operational amplifier 公开/授权日：2007-03-15