
基本信息:
- 专利标题: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 申请号:US18582045 申请日:2024-02-20
- 公开(公告)号:US20240192588A1 公开(公告)日:2024-06-13
- 发明人: Chih-Tsung SHIH , Tsung-Chih CHIEN , Tsung Chuan LEE , Hao-Shiang CHANG
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G03F1/66
- IPC分类号: G03F1/66 ; G03F7/00 ; H01L21/027 ; H01L21/673
摘要:
A reticle enclosure includes a base including a first surface, a cover including a second surface and coupled to the base with the first surface facing the second surface. The base and the cover form an internal space that includes a reticle. The reticle enclosure includes restraining mechanisms arranged in the internal space and for securing the reticle, and structures disposed adjacent the reticle in the internal space. The structures enclose the reticle at least partially, and limit passage of contaminants between the internal space and an external environment of the reticle enclosure. The structures include barriers disposed on the first and second surfaces. In other examples, a padding is installed in gaps between the barriers and the first and second surfaces. In other examples, the structures include wall structures disposed on the first and second surfaces and between the restraining mechanisms.
公开/授权文献:
- US12216399B2 Method of manufacturing semiconductor device 公开/授权日:2025-02-04
IPC结构图谱:
G | 物理 |
--G03 | 摄影术;电影术;利用了光波以外其他波的类似技术;电记录术;全息摄影术 |
----G03F | 图纹面的照相制版工艺,例如,印刷工艺、半导体器件的加工工艺;其所用材料;其所用原版;其所用专用设备 |
------G03F1/00 | 用于图纹面的照相制版的原版的制备 |
--------G03F1/66 | .专门适用于掩膜,空白掩膜或薄膜的容器;其制备 |