发明申请
US20230102906A1 CAPACITOR, MEMORY DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE CAPACITOR
有权
基本信息:
- 专利标题： CAPACITOR, MEMORY DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE CAPACITOR
- 申请号：US17715473 申请日：2022-04-07
- 公开(公告)号：US20230102906A1 公开(公告)日：2023-03-30
- 发明人： Changsoo LEE , Jinhong KIM , Yongsung KIM , Jiwoon PARK , Jooho LEE , Yong-Hee CHO
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2021-0128351 20210928
- 主分类号： H01L49/02
- IPC分类号： H01L49/02 ; H01L27/108
摘要：
A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnO2 doped with an impurity; a dielectric layer on the second conductive layer, the dielectric layer including a rutile-phase oxide; and an upper electrode layer on the dielectric layer.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L49/00 | 不包含在H01L27/00至H01L47/00和H01L51/00各组内的并且未包含在任何其他小类的固态器件；专门适用于制造或处理这些器件或其部件的方法或设备 |
| --------H01L49/02 | .薄膜或厚膜器件 |