基本信息:
- 专利标题： SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- 申请号：US17808797 申请日：2022-06-24
- 公开(公告)号：US20230094859A1 公开(公告)日：2023-03-30
- 发明人： Xiaoguang WANG , DINGGUI ZENG , Huihui LI , Jiefang DENG , Kanyu CAO
- 申请人： CHANGXIN MEMORY TECHNOLOGIES, INC. , BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY
- 申请人地址： CN Hefei City; CN Beijing
- 专利权人： CHANGXIN MEMORY TECHNOLOGIES, INC.,BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY
- 当前专利权人： CHANGXIN MEMORY TECHNOLOGIES, INC.,BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY
- 当前专利权人地址： CN Hefei City; CN Beijing
- 优先权： CN202111144928.3 20210928
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L27/11502 ; H01L27/22 ; H01L27/24
摘要：
The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, having a first surface; a plurality of memory cells, located on the first surface of the substrate and arranged according to a first preset pattern; and a plurality of memory contact structures, corresponding to the memory cells in a one-to-one manner, where bottom portions of the memory contact structures are in contact with top portions of the memory cells, and top portions of the memory contact structures are arranged according to a second preset pattern. The bottom portion of the memory contact structure is arranged opposite to the top portion of the memory contact structure.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/34 | .冷却装置；加热装置；通风装置或温度补偿装置 |
| ----------H01L23/522 | ..包含制作在半导体本体上的多层导电的和绝缘的结构的外引互连装置的 |
| ------------H01L23/528 | ...互连结构的布置 |