发明申请
US20230088827A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE
有权
基本信息:
- 专利标题： SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE
- 申请号：US17945538 申请日：2022-09-15
- 公开(公告)号：US20230088827A1 公开(公告)日：2023-03-23
- 发明人： Seunggeol NAM , Hyunjae LEE , Dukhyun CHOE , Jinseong HEO
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2021-0125212 20210917
- 主分类号： H01L29/51
- IPC分类号： H01L29/51 ; H01L29/78
摘要：
A semiconductor device includes: a first source/drain region; a second source/drain region; a channel between the first source/drain region and the second source/drain region; an interfacial insulating layer on the channel; a ferroelectric layer on the interfacial insulating layer; and a gate electrode on the ferroelectric layer, wherein, when a numerical value of dielectric constant of the interfacial insulating layer is K and a numerical value of remnant polarization of the ferroelectric layer is Pr, a material of the interfacial insulating layer and a material of the ferroelectric layer are selected so that K/Pr is 1 or more.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/41 | ..以其形状、相对尺寸或位置为特征的 |
| ------------H01L29/49 | ...金属绝缘体半导体电极 |
| --------------H01L29/51 | ....与其相关的绝缘材料 |