基本信息:
- 专利标题： BARRIER LAYER ON A PIEZOELECTRIC-DEVICE PAD
- 申请号：US17577715 申请日：2022-01-18
- 公开(公告)号：US20230037116A1 公开(公告)日：2023-02-02
- 发明人： Chih-Ming Chen
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H04R17/00
- IPC分类号： H04R17/00 ; H01L41/047 ; H01L41/053 ; H01L41/29 ; H04R31/00
摘要：
Various embodiments of the present disclosure are directed towards an integrated circuit (IC) chip in which a pad barrier layer caps a pad of a piezoelectric device. The pad barrier layer is configured to block hydrogen ions and/or other errant materials from diffusing to the piezoelectric layer. Absent the pad barrier layer, hydrogen ions from hydrogen-ion containing processes performed after forming the pad may diffuse to the piezoelectric layer along a via extending from the pad to the piezoelectric device. By blocking diffusion of hydrogen ions and/or other errant materials to the piezoelectric device, the pad barrier layer may prevent delamination and breakdown of the piezoelectric layer. Hence, the pad barrier layer may prevent failure of the piezoelectric device.
公开/授权文献:
- US12035104B2 Barrier layer on a piezoelectric-device pad 公开/授权日：2024-07-09
IPC结构图谱:
| H | 电学 |
| --H04 | 电通信技术 |
| ----H04R | 扬声器、送话器、唱机拾音器或类似的传感器 |
| ------H04R17/00 | 压电传感器；电致伸缩传感器 |