基本信息:
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
- 申请号：US17496300 申请日：2021-10-07
- 公开(公告)号：US20220302267A1 公开(公告)日：2022-09-22
- 发明人： Dukhyun CHOE , Jinseong HEO , Yunseong LEE , Sanghyun JO
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2021-0036079 20210319,KR10-2021-0040542 20210329
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L29/78 ; H01L29/66 ; H01L51/05 ; H01L29/51 ; H01L29/49
摘要：
Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, a channel layer at least one of on or in the substrate, an insulation layer on the substrate, a ferroelectric layer on the insulation layer, a fixed charge layer on an interface between the insulation layer and the ferroelectric layer, the fixed charge layer including charges of a first polarity, and a gate on the ferroelectric layer.