基本信息:
- 专利标题： SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- 申请号：US17724508 申请日：2022-04-20
- 公开(公告)号：US20220246513A1 公开(公告)日：2022-08-04
- 发明人： Kuan-Lin Ho , Chin-Liang Chen , Jiun-Yi Wu , Chi-Yang Yu , Yu-Min Liang , Wei-Yu Chen
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L23/00 ; H01L21/683 ; H01L21/48
摘要：
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a first under-bump metallization (UBM) pattern, a first conductive via, and a first dielectric layer laterally covering the first UBM pattern and the first conductive via. Entireties of a top surface and a bottom surface of the first UBM pattern are substantially planar. The first conductive via landing on the top surface of the first UBM pattern includes a vertical sidewall and a top surface connected to the vertical sidewall, and a planarized mark is on the top surface of the first conductive via. A bottom surface of the first dielectric layer is substantially flush with the bottom surface of the first UBM, and a top surface of the first dielectric layer is substantially flush with the top surface of the first conductive via.
公开/授权文献:
- US11749594B2 Semiconductor structure and manufacturing method thereof 公开/授权日：2023-09-05
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/34 | .冷却装置；加热装置；通风装置或温度补偿装置 |
| ----------H01L23/482 | ..由不可拆卸地施加到半导体本体上的内引线组成的 |
| ------------H01L23/498 | ...引线位于绝缘衬底上的 |