发明申请
US20220199377A1 SUBSTRATE PROCESSING APPARATUS, TEMPERATURE CONTROL METHOD OF SUBSTRATE PROCESSING APPARATUS, AND PROGRAM OF CONTROL DEVICE FOR CONTROLLING SUBSTRATE PROCESSING APPARATUS
有权
基本信息:
- 专利标题： SUBSTRATE PROCESSING APPARATUS, TEMPERATURE CONTROL METHOD OF SUBSTRATE PROCESSING APPARATUS, AND PROGRAM OF CONTROL DEVICE FOR CONTROLLING SUBSTRATE PROCESSING APPARATUS
- 申请号：US17553112 申请日：2021-12-16
- 公开(公告)号：US20220199377A1 公开(公告)日：2022-06-23
- 发明人： Toshiharu HIRATA , Manabu NAKAGAWASAI , Takashi ISHII , Keiichi IOBE
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2020-212940 20201222
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; F24H9/06 ; C23C14/50 ; C23C14/54
摘要：
A substrate processing apparatus, a method, and a program for controlling temperature of the substrate processing apparatus. A substrate processing apparatus comprising: a mounting table configured to hold a substrate to be processed in a vacuum processing container; a heat transfer gas container placed on a back side of the mounting table with a gap between the mounting table and the heat transfer gas container and configured to be cooled by a refrigerator; and a control device configured to control heating of the refrigerator to the vicinity of a first temperature on the basis of a temperature of a first control point provided near the refrigerator and then switching the heating control for the refrigerator on or off.