
基本信息:
- 专利标题: ESD Protection Device with Reduced Harmonic Distortion
- 申请号:US17027226 申请日:2020-09-21
- 公开(公告)号:US20220094158A1 公开(公告)日:2022-03-24
- 发明人: Egle Tylaite , Joost Adriaan Willemen
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 主分类号: H02H9/04
- IPC分类号: H02H9/04 ; H01L27/02
摘要:
An overvoltage protection device includes first and second semiconductor devices arranged in an anti-serial configuration with a conductive link connected between the first and second semiconductor devices at a central node of the overvoltage protection device, a first terminal connection to a terminal of the first semiconductor device that is opposite from the central node, a second terminal connection to a terminal of the second semiconductor device that is opposite from the central node. A total capacitance of elements in a first transmission path that is between the first terminal connection and the central node substantially matches a total capacitance of elements in a second transmission path that is between the second terminal connection and the central node. The total capacitance of elements in the second transmission path includes a self-capacitance of the conductive link.
公开/授权文献:
- US11936178B2 ESD protection device with reduced harmonic distortion 公开/授权日:2024-03-19