发明申请
US20220091164A1 HIGH ACCURACY LOW TEMPERATURE DRIFT HIGH-SIDE CURRENT SENSING HARDWARE AND METHOD
有权
![HIGH ACCURACY LOW TEMPERATURE DRIFT HIGH-SIDE CURRENT SENSING HARDWARE AND METHOD](/abs-image/US/2022/03/24/US20220091164A1/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: HIGH ACCURACY LOW TEMPERATURE DRIFT HIGH-SIDE CURRENT SENSING HARDWARE AND METHOD
- 申请号:US17492210 申请日:2021-10-01
- 公开(公告)号:US20220091164A1 公开(公告)日:2022-03-24
- 发明人: Yannick GUEDON , Baris Volkan YILDIRIM , Teerasak LEE
- 申请人: STMicroelectronics Asia Pacific Pte Ltd
- 申请人地址: SG Singapore
- 专利权人: STMicroelectronics Asia Pacific Pte Ltd
- 当前专利权人: STMicroelectronics Asia Pacific Pte Ltd
- 当前专利权人地址: SG Singapore
- 主分类号: G01R19/25
- IPC分类号: G01R19/25 ; H02J50/12
摘要:
A circuit includes a tank capacitor coupled between first and second nodes, and a sense resistor having a first terminal coupled to the first node and a second terminal coupled to a regulator input. A switching circuit has first and second inputs coupled to the first and second terminals of the sense resistor. A gain stage has first and second inputs capacitively coupled to first and second outputs of the switching circuit. An analog-to-digital converter receives the output of the gain stage, and receives first and second differential voltages. A reference voltage generator has a temperature independent current source coupled to source current to a reference resistor, the first differential reference voltage being formed across the reference resistor. The reference resistor and sense resistor are located sufficiently close to one another on a single common substrate such that they remain at substantially a same temperature.
公开/授权文献:
IPC结构图谱:
G | 物理 |
--G01 | 测量;测试 |
----G01R | 测量电变量;测量磁变量(通过转换成电变量对任何种类的物理变量进行测量参见G01类名下的 |
------G01R19/00 | 用于测量电流或电压或者用于指示其存在或符号的装置 |
--------G01R19/25 | .采用数字测量技术 |