基本信息:
- 专利标题： DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 申请号：US17325490 申请日：2021-05-20
- 公开(公告)号：US20210358766A1 公开(公告)日：2021-11-18
- 发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Masayuki SAKAKURA , Yoshiaki OIKAWA
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2009-196618 20090827
- 主分类号： H01L21/477
- IPC分类号： H01L21/477 ; H01L27/12 ; H01L29/66 ; H01L21/02 ; G02F1/1333 ; G02F1/1368 ; H01L29/786
摘要：
An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
公开/授权文献:
- US11532488B2 Display device and method for manufacturing the same 公开/授权日：2022-12-20
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/42 | ....用辐射轰击的 |
| ----------------H01L21/477 | .....用于改善半导体材料性能的热处理，例如退火、烧结 |