基本信息:
- 专利标题： INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- 申请号：US17344318 申请日：2021-06-10
- 公开(公告)号：US20210305213A1 公开(公告)日：2021-09-30
- 发明人： Chih-Lin CHEN , Hui-Yu LEE , Fong-Yuan CHANG , Po-Hsiang HUANG , Chin-Chou LIU
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L25/065
- IPC分类号： H01L25/065 ; H01L23/48 ; H01L23/528 ; H01L23/522 ; H01L23/538 ; H01L23/00 ; H01L25/00 ; H01L49/02 ; H01L21/768
摘要：
An integrated circuit includes a first semiconductor wafer, a second semiconductor wafer, a first interconnect structure, an inductor, and a through substrate via. The first semiconductor wafer has a first device in a first side of the first semiconductor wafer. The second semiconductor wafer is over the first semiconductor wafer. The first interconnect structure is on a second side of the first semiconductor wafer opposite from the first side of the first semiconductor wafer. The inductor is below the first semiconductor wafer, and at least a portion of the inductor is within the first interconnect structure. The through substrate via extends through the first semiconductor wafer. The inductor is coupled to at least the first device by at least the through substrate via.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L25/00 | 由多个单个半导体或其他固态器件组成的组装件 |
| --------H01L25/03 | .所有包含在H01L27/00至H01L51/00各组中同一小组内的相同类型的器件，例如整流二极管的组装件 |
| ----------H01L25/04 | ..不具有单独容器的器件 |
| ------------H01L25/065 | ...包含在H01L27/00组类型的器件 |