基本信息:
- 专利标题： SEMICONDUCTOR DEVICE AND CONTINUOUS READING METHOD
- 申请号：US16931406 申请日：2020-07-16
- 公开(公告)号：US20210035647A1 公开(公告)日：2021-02-04
- 发明人： Makoto Senoo , Katsutoshi Suito , Tsutomu Taniguchi , Sho Okabe
- 申请人： Winbond Electronics Corp.
- 申请人地址： TW Taichung City
- 专利权人： Winbond Electronics Corp.
- 当前专利权人： Winbond Electronics Corp.
- 当前专利权人地址： TW Taichung City
- 优先权： JP2019-138625 20190729
- 主分类号： G11C16/26
- IPC分类号： G11C16/26 ; G11C16/04
摘要：
A continuous readout method of a flash memory is provided. Selected bit lines (BL0, BL4, BL8, and BL12) are masked by three non-selected bit lines when data of a cache memory (C0) of a selected page of a memory cell array is read. Selected bit lines (BL2, BL6, BL10, and BL14) are masked by three non-selected bit lines when data of a cache memory (C1) of the same selected page is read. In this way, each of first page data and second page data read from a plurality of selected pages is continuously outputted.
公开/授权文献:
- US11735270B2 Semiconductor device and continuous reading method 公开/授权日：2023-08-22
IPC结构图谱:
| G | 物理 |
| --G11 | 信息存储 |
| ----G11C | 静态存储器 |
| ------G11C16/00 | 可擦除可编程序只读存储器 |
| --------G11C16/02 | .电可编程序的 |
| ----------G11C16/06 | ..辅助电路，例如，用于写入存储器的 |
| ------------G11C16/26 | ...读出或读电路；数据输出电路 |