![CURRENT SENSOR AND METHOD FOR MANUFACTURING CURRENT SENSOR](/abs-image/US/2021/01/14/US20210011058A1/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: CURRENT SENSOR AND METHOD FOR MANUFACTURING CURRENT SENSOR
- 申请号:US16916178 申请日:2020-06-30
- 公开(公告)号:US20210011058A1 公开(公告)日:2021-01-14
- 发明人: Kenji SUZUKI , Kenji KAI
- 申请人: Asahi Kasei Microdevices Corporation
- 申请人地址: JP Tokyo
- 专利权人: Asahi Kasei Microdevices Corporation
- 当前专利权人: Asahi Kasei Microdevices Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2019-128714 20190710,JP2020-084150 20200512
- 主分类号: G01R15/20
- IPC分类号: G01R15/20 ; G01R19/00 ; H01L43/06 ; H01L43/14
摘要:
Provided is a current sensor for reducing heat generation caused by energization. The current sensor is provided, including: primary terminals; a first magnetic sensor; a primary conductor; and a signal processing IC; wherein the primary conductor has a bend section including: a first region that surrounds at least a part of the first magnetic sensor in planar view and at least a part of which does not face the signal processing IC; and a second region that faces the signal processing IC; wherein the height of the first region is lower than that of the primary terminal, the height of the second region is lower than that of the first region, and the first magnetic sensor is connected to the signal processing IC through conductive wires, on the opposite side from the plane.
公开/授权文献:
- US11360122B2 Current sensor and method for manufacturing current sensor 公开/授权日:2022-06-14