基本信息:
- 专利标题： FINFET STRUCTURE WITH DOPED REGION
- 申请号：US16995253 申请日：2020-08-17
- 公开(公告)号：US20200381534A1 公开(公告)日：2020-12-03
- 发明人： Shahaji B. MORE , Chun-Hsiung TSAI , Cheng-Yi PENG , Shih-Chieh CHANG , Kuo-Feng YU
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/08 ; H01L29/78
摘要：
Semiconductor structures are provided. The semiconductor structure includes a fin structure protruding from a substrate and a doped region formed in the fin structure. The semiconductor structure further includes a metal gate structure formed across the fin structure and a gate spacer formed on a sidewall of the metal gate structure. The semiconductor structure further includes a source/drain structure formed over the doped region. In addition, the doped region continuously surrounds the source/drain structure and is in direct contact with the gate spacer.
公开/授权文献:
- US11855176B2 FinFET structure with doped region 公开/授权日：2023-12-26