基本信息:
- 专利标题： METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 申请号：US16089753 申请日：2017-03-27
- 公开(公告)号：US20200312810A1 公开(公告)日：2020-10-01
- 发明人： Eiji Hayashishita
- 申请人： MITSUI CHEMICALS TOHCELLO, INC.
- 申请人地址： JP Chiyoda-ku, Tokyo
- 专利权人： MITSUI CHEMICALS TOHCELLO, INC.
- 当前专利权人： MITSUI CHEMICALS TOHCELLO, INC.
- 当前专利权人地址： JP Chiyoda-ku, Tokyo
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@42590874
- 国际申请： PCT/JP2017/012478 WO 20170327
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/482
摘要：
A method for manufacturing a semiconductor device according to the present invention includes at least the following three steps: (A) a step of preparing a first structure (100) including an adhesive laminate film (50) having a heat-resistant resin layer (10), a flexible resin layer (20) and an adhesive resin layer (30) in this order, and a first semiconductor component (60) adhered to the adhesive resin layer (30) and having a first terminal (65); (B) a step of performing solder reflow processing on the first structure (100) in a state where the first semiconductor component (60) is adhered to the adhesive resin layer (30); and (C) a step of, after the step (B), peeling the heat-resistant resin layer (10) from the adhesive laminate film (50).
公开/授权文献:
- US11107789B2 Method for manufacturing semiconductor device 公开/授权日：2021-08-31
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |