基本信息:
- 专利标题： SEMICONDUCTOR DEVICE WITH ELECTROPLATED COPPER STRUCTURES
- 申请号：US16292975 申请日：2019-03-05
- 公开(公告)号：US20200286844A1 公开(公告)日：2020-09-10
- 发明人： Keith Edward Johnson , Nazila Dadvand
- 申请人： Texas Instruments Incorporated
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H05K1/11 ; H05K3/10 ; H05K3/24
摘要：
In a described example, a method is described including: depositing a zinc seed layer on a substrate; forming a photoresist pattern on the zinc seed layer, with openings in the photoresist pattern exposing portions of the zinc seed layer; electroplating a copper structure onto the exposed portions of the zinc seed layer; stripping the photoresist; annealing the substrate to form copper/zinc alloy between the copper structure and the substrate; and etching away the unreacted portions of the zinc seed layer.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |