基本信息:
- 专利标题： HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS
- 申请号：US16725191 申请日：2019-12-23
- 公开(公告)号：US20200209754A1 公开(公告)日：2020-07-02
- 发明人： Seunghyun KIM , Yushin PARK , Hyungseok PARK , Sunghwan KIM , Hyeonil JUNG
- 申请人： SAMSUNG SDI CO., LTD.
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@24adf86f
- 主分类号： G03F7/11
- IPC分类号： G03F7/11 ; C09D161/12
摘要：
A hardmask composition, a hardmask layer, and a method of forming patterns, the composition including a solvent; and a polymer including a structural unit represented by Chemical Formula 1, wherein, in Chemical Formula 1, A is a substituted or unsubstituted dihydroxypyrene moiety, and E is a substituted or unsubstituted pyrenyl group.