基本信息:
- 专利标题： SEMICONDUCTOR STRUCTURE HAVING INTEGRATED INDUCTOR THEREIN
- 申请号：US16744793 申请日：2020-01-16
- 公开(公告)号：US20200152728A1 公开(公告)日：2020-05-14
- 发明人： MING-CHE LEE , I-NAN CHEN , SHENG-CHAU CHEN , CHENG-HSIEN CHOU , CHENG-YUAN TSAI
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 主分类号： H01L49/02
- IPC分类号： H01L49/02 ; H01L23/522 ; H01L23/00 ; H01L27/01 ; H01L23/31
摘要：
A semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; and a magnetic core in the second passivation layer; wherein the magnetic core includes a first magnetic material layer and a second magnetic material layer over the first magnetic material layer, the first magnetic material layer and the second magnetic material layer are separated by a high resistance isolation layer, and the high resistance isolation layer has a resistivity greater than about 1.3 ohm-cm.
公开/授权文献:
- US11011600B2 Semiconductor structure having integrated inductor therein 公开/授权日：2021-05-18
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L49/00 | 不包含在H01L27/00至H01L47/00和H01L51/00各组内的并且未包含在任何其他小类的固态器件；专门适用于制造或处理这些器件或其部件的方法或设备 |
| --------H01L49/02 | .薄膜或厚膜器件 |