发明申请
US20190221647A1 SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
审中-公开
基本信息:
- 专利标题： SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- 申请号：US16365172 申请日：2019-03-26
- 公开(公告)号：US20190221647A1 公开(公告)日：2019-07-18
- 发明人： Tsutomu Hori
- 申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 申请人地址： JP Osaka
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JP2015-228517 20151124
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L21/02 ; H01L29/04 ; C30B29/00 ; H01L29/66
摘要：
A silicon carbide single crystal substrate includes a first main surface and an orientation flat. The orientation flat extends in a direction. The first main surface includes an end region extending by at most 5 mm from an outer periphery of the first main surface. In a direction perpendicular to the first main surface, an amount of warpage of the end region continuous to the orientation flat is not greater than 3 μm.