发明申请
US20190198312A1 NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LAMINATE, LAMINATED STRUCTURE, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LAMINATE
审中-公开
基本信息:
- 专利标题： NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LAMINATE, LAMINATED STRUCTURE, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LAMINATE
- 申请号：US16223924 申请日：2018-12-18
- 公开(公告)号：US20190198312A1 公开(公告)日：2019-06-27
- 发明人： Takehiro YOSHIDA , Hajime FUJIKURA , Masatomo SHIBATA , Fumimasa HORIKIRI
- 申请人： SCIOCS COMPANY LIMITED , SUMITOMO CHEMICAL COMPANY, LIMITED
- 优先权： JP2017-247639 20171225
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/20 ; H01L29/04 ; H01L29/32
摘要：
To provide a technique of increasing a radius of curvature of (0001) plane, and narrowing an off-angle distribution, there is provided a nitride semiconductor substrate containing a group III nitride semiconductor crystal and having a main surface in which a nearest low index crystal plane is (0001) plane, wherein (0001) plane in one of a direction along axis and a direction along axis orthogonal to the axis, is curved in a concave spherical shape with respect to the main surface, and a radius of curvature of the (0001) plane in one of the direction along the axis and the direction along the axis orthogonal to the axis is different from a radius of curvature of at least a part of the (0001) plane in the other direction.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |