发明申请
US20190148139A1 INSULATOR, CAPACITOR WITH THE SAME AND FABRICATION METHOD THEREOF, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
审中-公开
基本信息:
- 专利标题： INSULATOR, CAPACITOR WITH THE SAME AND FABRICATION METHOD THEREOF, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- 申请号：US16227352 申请日：2018-12-20
- 公开(公告)号：US20190148139A1 公开(公告)日：2019-05-16
- 发明人： Kwan-Soo KIM , Soon-Wook KIM
- 申请人： Magnachip Semiconductor, Ltd.
- 申请人地址： KR Cheongju-si
- 专利权人： Magnachip Semiconductor, Ltd.
- 当前专利权人： Magnachip Semiconductor, Ltd.
- 当前专利权人地址： KR Cheongju-si
- 优先权： KR10-2008-0100228 20081013
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/285 ; H01L21/311 ; H01L21/768 ; H01L49/02 ; H01L23/532 ; H01L23/522 ; H01L23/528 ; H01L21/3213
摘要：
Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al2O3) layer and a hafnium oxide (HfO2) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |