发明申请
US20190140166A1 DEVICE, SYSTEM AND METHOD FOR IMPROVED MAGNETIC ANISOTROPY OF A MAGNETIC TUNNEL JUNCTION
审中-公开
基本信息:
- 专利标题： DEVICE, SYSTEM AND METHOD FOR IMPROVED MAGNETIC ANISOTROPY OF A MAGNETIC TUNNEL JUNCTION
- 申请号：US16097801 申请日：2016-07-01
- 公开(公告)号：US20190140166A1 公开(公告)日：2019-05-09
- 发明人： MD Tofizur RAHMAN , Christopher J. WIEGAND , Brian MAERTZ , Daniel G. OUELLETTE , Kevin P. O'BRIEN , Kaan OGUZ , Brian S. DOYLE , Mark L. DOCZY , Daniel B. BERGSTROM , Justin S. BROCKMAN , Oleg GOLONZKA , Tahir GHANI
- 申请人： MD Tofizur RAHMAN , Christopher J. WIEGAND , Brian MAERTZ , Daniel G. OUELLETTE , Kaan OGUZ , Brian S. DOYLE , Mark L. DOCZY , Daniel B. BERGSTROM , Justin S. BROCKMAN , Oleg GOLONZKA , Tahhir GHANI , Intel Corporation
- 国际申请： PCT/US2016/040875 WO 20160701
- 主分类号： H01L43/12
- IPC分类号： H01L43/12 ; H01L43/10 ; H01L43/08 ; H01L43/02 ; G11C11/16
摘要：
Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L43/00 | 应用电—磁或者类似磁效应的器件；专门适用于制造或处理这些器件或其部件的方法或设备 |
| --------H01L43/12 | .专门适用于制造或处理这些器件或其部件的方法或设备 |