基本信息:
- 专利标题： MULTI-LAYER, STRESS-ISOLATION PLATFORM FOR A MEMS DIE
- 申请号：US15896749 申请日：2018-02-14
- 公开(公告)号：US20180319654A1 公开(公告)日：2018-11-08
- 发明人： Wayne C. Long , Joseph L. Nguyen
- 申请人： DunAn Microstaq, Inc.
- 申请人地址： US TX Austin
- 专利权人： DunAn Microstaq, Inc.
- 当前专利权人： DunAn Microstaq, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： B81B7/00
- IPC分类号： B81B7/00 ; B81C3/00 ; B81C1/00
摘要：
A multi-layer, stress-isolation platform configured for attaching a MEMS die to a base includes a first platform, a first layer of attachment material between the base and the first platform and attaching the first platform to the base, a MEMS die, and a second layer of attachment material between the first platform and the MEMS die and attaching the MEMS die to the first platform.
公开/授权文献:
- US10457547B2 Multi-layer, stress-isolation platform for a MEMS die 公开/授权日：2019-10-29