发明申请
US20180294336A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD FOR EPITAXIAL SUBSTRATES FOR SEMICONDUCTOR ELEMENTS
审中-公开
基本信息:
- 专利标题： EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD FOR EPITAXIAL SUBSTRATES FOR SEMICONDUCTOR ELEMENTS
- 申请号：US15962300 申请日：2018-04-25
- 公开(公告)号：US20180294336A1 公开(公告)日：2018-10-11
- 发明人： Mikiya ICHIMURA , Sota MAEHARA , Yoshitaka KURAOKA
- 申请人： NGK INSULATORS, LTD.
- 优先权： JP2016-005115 20160114
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/02 ; H01L29/66 ; H01L29/778 ; H01L29/205 ; C30B29/38
摘要：
Provided is an epitaxial substrate for semiconductor elements which suppresses leakage current and has high breakdown voltage. An epitaxial substrate for semiconductor elements includes: a semi-insulating free-standing substrate formed of GaN being doped with Zn; a buffer layer formed of group 13 nitride to be adjacent to the free-standing substrate; a channel layer formed of group 13 nitride to be adjacent to the buffer layer; and a barrier layer formed of group 13 nitride on an opposite side of the buffer layer with the channel layer therebetween, wherein part of a first region consisting of the free-standing substrate and the buffer layer is a second region containing Si at a concentration of 1×1017 cm−3 or more, and a minimum value of a concentration of Zn in the second region is 1×1017 cm−3.