基本信息:
- 专利标题： POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE
- 申请号：US15951023 申请日：2018-04-11
- 公开(公告)号：US20180291309A1 公开(公告)日：2018-10-11
- 发明人： Donald Frye , Jun Liu , Daniela White , Michael White
- 申请人： Entegris, Inc.
- 主分类号： C11D3/00
- IPC分类号： C11D3/00 ; C11D3/30 ; C11D3/33 ; C11D3/20 ; C11D11/00
摘要：
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.
公开/授权文献:
IPC结构图谱:
| C | 化学；冶金 |
| --C11 | 动物或植物油、脂、脂肪物质或蜡；由此制取的脂肪酸；洗涤剂；蜡烛 |
| ----C11D | 洗涤剂组合物；用单一物质作为洗涤剂；皂或制皂；树脂皂；甘油的回收 |
| ------C11D3/00 | 包括在C11D1/00组内之洗涤组合物的其他配料成分 |