发明申请
US20180265360A1 COMPOSITE SUBSTRATE, METHOD FOR FORMING NANOCARBON FILM, AND NANOCARBON FILM
审中-公开
基本信息:
- 专利标题： COMPOSITE SUBSTRATE, METHOD FOR FORMING NANOCARBON FILM, AND NANOCARBON FILM
- 申请号：US15534652 申请日：2015-12-16
- 公开(公告)号：US20180265360A1 公开(公告)日：2018-09-20
- 发明人： Shoji Akiyama , Yoshihiro Kubota , Makoto Kawai , Shigeru Konishi , Hiroshi Mogi
- 申请人： Shin-Etsu Chemical Co., Ltd.
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.,Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.,Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo JP Tokyo
- 优先权： JP2014-258810 20141222
- 国际申请： PCT/JP2015/085237 WO 20151216
- 主分类号： C01B32/184
- IPC分类号： C01B32/184 ; B32B9/00 ; B32B9/04 ; B32B37/18 ; B32B38/00 ; C30B29/36 ; C01B32/956 ; H01L21/02 ; H01L29/16 ; H01L29/34
摘要：
Provided is a composite substrate which is provided with: a single crystal silicon carbide thin film 11 having a thickness of 1μm or less; a handle substrate 12 which supports the single crystal silicon carbide thin film 11 and is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100° C.; and an intervening layer 13 which has a thickness of 1μm or less and is arranged between the single crystal silicon carbide thin film 11 and the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.
公开/授权文献:
IPC结构图谱:
| C | 化学；冶金 |
| --C01 | 无机化学 |
| ----C01B | 非金属元素；其化合物 |
| ------C01B32/00 | 碳；其化合物 |
| --------C01B32/15 | .纳米级碳材料 |
| ----------C01B32/182 | ..石墨烯 |
| ------------C01B32/184 | ...制备 |