发明申请
US20180224392A1 SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, AND SENSOR IN WHICH SAME IS USED
审中-公开
基本信息:
- 专利标题： SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, AND SENSOR IN WHICH SAME IS USED
- 申请号：US15748819 申请日：2016-08-08
- 公开(公告)号：US20180224392A1 公开(公告)日：2018-08-09
- 发明人： Kazuki ISOGAI , Seiichiro MURASE , Hiroji SHIMIZU
- 申请人： TORAY INDUSTRIES, INC.
- 申请人地址： JP Tokyo
- 专利权人： TORAY INDUSTRIES, INC.
- 当前专利权人： TORAY INDUSTRIES, INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2015-158671 20150811
- 国际申请： PCT/JP2016/073288 WO 20160808
- 主分类号： G01N27/414
- IPC分类号： G01N27/414 ; H01L51/05 ; H01L51/00
摘要：
The present invention is to provide a semiconductor element achieving a high-level detection sensitivity when utilized as a sensor. The present invention relates to a semiconductor element including an organic film, a first electrode, a second electrode, and a semiconductor layer, in which the first electrode, the second electrode and the semiconductor layer are formed on the organic film, the semiconductor layer is arranged between the first electrode and the second electrode, the semiconductor layer contains a carbon nanotube, and the organic film has a water contact angle of 5° or more and 50° or less.
公开/授权文献:
IPC结构图谱:
| G | 物理 |
| --G01 | 测量；测试 |
| ----G01N | 借助于测定材料的化学或物理性质来测试或分析材料 |
| ------G01N27/00 | 用电、电化学或磁的方法测试或分析材料 |
| --------G01N27/02 | .通过测试阻抗 |
| ----------G01N27/28 | ..电解池部件 |
| ------------G01N27/414 | ...对离子敏感的场效应晶体管或化学场效应晶体管，即ISFETS或CHEMFETS |