基本信息:
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 申请号：US15878143 申请日：2018-01-23
- 公开(公告)号：US20180212028A1 公开(公告)日：2018-07-26
- 发明人： Takashi KUNO , Hiroki TSUMA , Satoshi KUWANO , Akitaka SOENO , Toshitaka KANEMARU , Kenta HASHIMOTO , Noriyuki KAKIMOTO , Shuji YONEDA
- 申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
- 申请人地址： JP Toyota-shi JP Kariya-shi
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- 当前专利权人地址： JP Toyota-shi JP Kariya-shi
- 优先权： JP2017-010627 20170124; JP2017-246873 20171222
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L23/31 ; H01L23/00 ; H01L21/285 ; H01L29/45 ; H01L29/739 ; H01L29/66
摘要：
A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.
公开/授权文献:
- US10490638B2 Semiconductor device and method of manufacturing the same 公开/授权日：2019-11-26
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/41 | ..以其形状、相对尺寸或位置为特征的 |
| ------------H01L29/417 | ...通有待整流、放大或切换电流的 |