基本信息:
- 专利标题： ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
- 申请号：US15121039 申请日：2016-07-15
- 公开(公告)号：US20180197900A1 公开(公告)日：2018-07-12
- 发明人： Yong Deng
- 申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 申请人地址： CN Shenzhen City
- 专利权人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
- 当前专利权人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
- 当前专利权人地址： CN Shenzhen City
- 优先权： CN201610459122.6 20160622
- 国际申请： PCT/CN2016/090105 WO 20160715
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/4763 ; H01L21/467 ; H01L29/423 ; H01L29/786 ; H01L29/45 ; H01L29/24 ; G02F1/1368 ; H01L29/66 ; H01L21/02 ; G02F1/1343
摘要：
The present invention provides an array substrate and a manufacturing method thereof. The method includes covering a reduction metal layer on an oxide semiconductor layer film and simultaneously forming a source pattern, a drain pattern, a pixel electrode pattern, and an oxide semiconductor layer through patterning the oxide semiconductor layer film and the reduction metal layer with one mask-based operation, followed by reducing the source pattern, the drain pattern, and the pixel electrode pattern to conductors through laser annealing to simultaneously form a source electrode, a drain electrode, and a pixel electrode. The entire manufacturing process needs, at most, only three rounds of mask-based operations so that, compared to the prior art, the number of mask-based operations required can be effectively reduced, the manufacturing operation can be simplified, and the performance of a TFT can be improved and an aperture ratio of the array substrate can be increased.
公开/授权文献:
- US10217778B2 Array substrate and manufacturing method thereof 公开/授权日：2019-02-26