基本信息:
- 专利标题： REACTION TUBE STRUCTURE AND SUBSTRATE PROCESSING APPARATUS
- 申请号：US15816125 申请日：2017-11-17
- 公开(公告)号：US20180142353A1 公开(公告)日：2018-05-24
- 发明人： Tetsuya MARUBAYASHI , Satoru MURATA , Kosuke TAKAGI , Atsushi HIRANO , Kiyoaki YAMADA , Haruo MORIKAWA
- 申请人： HITACHI KOKUSAI ELECTRIC INC.
- 申请人地址： JP Tokyo
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2016-224973 20161118; JP2017-201009 20171017
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; C23C16/52 ; C23C16/44 ; C23C16/458 ; H01L21/673
摘要：
A substrate processing apparatus includes a reaction tube defining a substrate processing chamber; a gas inlet provided at a lower portion of the reaction tube to supply a process gas; a first buffer unit for temporarily retaining the process gas, the first buffer unit at a first side of an inner surface of the reaction tube and includes a plurality of gas supply holes; and a gas outlet provided at a second side of the inner surface of the reaction tube opposite to the first side, to exhaust the process gas from the process chamber. The gas supply holes are provided from an upper end portion of the first buffer unit to a lower end portion of the first buffer unit, and the process gas is supplied through the plurality of gas supply holes into the process chamber, passes through the process chamber, and exhausted through the gas outlet.
公开/授权文献:
- US11359283B2 Reaction tube structure and substrate processing apparatus 公开/授权日：2022-06-14