基本信息:
- 专利标题： FABRICATION OF STABLE PEROVSKITE-BASED OPTOELECTRONIC DEVICES
- 申请号：US15567282 申请日：2016-05-06
- 公开(公告)号：US20180114648A1 公开(公告)日：2018-04-26
- 发明人： Yabing Qi , Sonia Ruiz Raga , Luis Katsuya Ono
- 申请人： OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- 申请人地址： JP Kunigami-gun, Okinawa
- 专利权人： OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- 当前专利权人： OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- 当前专利权人地址： JP Kunigami-gun, Okinawa
- 国际申请： PCT/JP2016/002250 WO 20160506
- 主分类号： H01G9/20
- IPC分类号： H01G9/20 ; H01G9/00 ; H01L51/00 ; H01L51/42
摘要：
A method of fabricating a perovskite-based optoelectronic device is provided, the method comprising: forming an active layer comprising organometal halide perovskite; making a solution comprising a hole transport material (HTM) and a solvent, the solvent having a boiling point lower than that of chlorobenzene; and forming a hole transport layer (HTL) by spin-coating the solution on the active layer. The solvents having a boiling point lower than that of chlorobenzene include chloroform and dichloromethane.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01G | 电容器；电解型的电容器、整流器、检波器、开关器件、光敏器件或热敏器件 |
| ------H01G9/00 | 电解电容器、整流器、检波器、开关器件、光敏器件或热敏器件；其制造方法 |
| --------H01G9/20 | .光敏器件 |