
基本信息:
- 专利标题: NON-VOLATILE MEMORY SYSTEM WITH WIDE I/O MEMORY DIE
- 申请号:US15287344 申请日:2016-10-06
- 公开(公告)号:US20180102344A1 公开(公告)日:2018-04-12
- 发明人: Venkatesh P. Ramachandra , Michael Mostovoy , Hem Takiar , Gokul Kumar , Vinayak Ghatawade
- 申请人: SANDISK TECHNOLOGIES LLC
- 申请人地址: US TX Plano
- 专利权人: SANDISK TECHNOLOGIES LLC
- 当前专利权人: SANDISK TECHNOLOGIES LLC
- 当前专利权人地址: US TX Plano
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H01L25/18 ; G11C7/10 ; G11C7/22 ; G11C29/00 ; G11C7/06
摘要:
A non-volatile storage system includes a plurality of memory dies and an interface circuit. Each memory die includes a wide I/O interface electrically coupled to another wide I/O interface of another memory die of the plurality of memory dies. The interface circuit is physically separate from the memory dies. The interface circuit includes a first interface and a second interface. The first interface comprises a wide I/O interface electrically coupled to a wide I/O interface of at least one of the memory dies of the plurality of memory dies. The second interface is a narrow I/O interface configured to communicate with an external circuit.
公开/授权文献:
- US10381327B2 Non-volatile memory system with wide I/O memory die 公开/授权日:2019-08-13
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L25/00 | 由多个单个半导体或其他固态器件组成的组装件 |
--------H01L25/03 | .所有包含在H01L27/00至H01L51/00各组中同一小组内的相同类型的器件,例如整流二极管的组装件 |
----------H01L25/04 | ..不具有单独容器的器件 |
------------H01L25/065 | ...包含在H01L27/00组类型的器件 |