基本信息:
- 专利标题： SEMICONDUCTOR MEMORY DEVICES
- 申请号：US15822586 申请日：2017-11-27
- 公开(公告)号：US20180090509A1 公开(公告)日：2018-03-29
- 发明人： Gang Zhang , Hyuk KIM , Yong-Hyun KWON , Sangwuk PARK
- 申请人： Gang Zhang , Hyuk KIM , Yong-Hyun KWON , Sangwuk PARK
- 优先权： KR10-2016-0025228 20160302
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L27/12 ; H01L23/522 ; H01L27/118
摘要：
Provided is a semiconductor memory device. The semiconductor memory device includes a peripheral circuit gate pattern on a first substrate, an impurity region in the first substrate and spaced apart from the peripheral circuit gate pattern, a cell array structure on the peripheral circuit gate pattern, a second substrate between the peripheral circuit gate pattern and the cell array structure, and a via that is in contact with the impurity region and disposed between the first substrate and the second substrate. The via electrically connects the first and second substrates to each other.
公开/授权文献:
- US10224339B2 Semiconductor memory devices 公开/授权日：2019-03-05
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/085 | ....只包含场效应的组件 |
| ----------------H01L27/088 | .....有绝缘栅场效应晶体管的组件 |
| ------------------H01L27/092 | ......互补MIS场效应晶体管 |