![METHOD OF PROCESSING WAFER](/abs-image/US/2018/03/15/US20180076088A1/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: METHOD OF PROCESSING WAFER
- 申请号:US15706137 申请日:2017-09-15
- 公开(公告)号:US20180076088A1 公开(公告)日:2018-03-15
- 发明人: Hideyuki Sandoh
- 申请人: DISCO CORPORATION
- 优先权: JP2016-180912 20160915
- 主分类号: H01L21/78
- IPC分类号: H01L21/78 ; H01L21/304 ; H01L21/308 ; H01L21/3065 ; H01L21/683 ; H01L21/3213
摘要:
A method of processing a wafer includes forming a mask on portions of a face side of the wafer which correspond to devices; performing plasma etching on the face side of the wafer through the mask to etch areas of streets other than areas thereof corresponding to metal components, thereby forming grooves in the areas of the streets to a depth corresponding to a finished thickness of device chips; bonding a protective member for protecting the face side of the wafer, holding the face side of the wafer on a chuck table through the protective member and grinding a reverse side of the wafer until bottoms of the grooves are exposed, to fragmentize the wafer into the device chips; and picking up the device chips from the protective member, leaving remaining regions of the substrate which correspond to the metal components on the protective member.
公开/授权文献:
- US10410923B2 Method of processing wafer 公开/授权日:2019-09-10
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置;专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |