基本信息:
- 专利标题： MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION
- 申请号：US15728375 申请日：2017-10-09
- 公开(公告)号：US20180033471A1 公开(公告)日：2018-02-01
- 发明人： Yue-Der CHIH , Cheng-Hsiung KUO , Gu-Huan LI , Chien-Yin LIU
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： G11C7/20
- IPC分类号： G11C7/20 ; G11C11/16 ; G11C11/406 ; G11C13/00 ; G11C5/02
摘要：
A memory device includes memory cells and a refresh module. The memory cells are coupled to a bit line, in which at least one memory cell of the memory cells is configured to store predetermined data. The refresh module is configured to refresh the at least one memory cell if a target memory cell of the memory cells is programmed or erased, in order to keep at least one cell current of the at least one memory cell away from a predetermined verify current level.
公开/授权文献:
- US10475490B2 Memory devices with improved refreshing operation 公开/授权日：2019-11-12
IPC结构图谱:
| G | 物理 |
| --G11 | 信息存储 |
| ----G11C | 静态存储器 |
| ------G11C7/00 | 数字存储器信息的写入或读出装置 |
| --------G11C7/20 | .存储器单元初始化电路，例如当加电或断电时的存储器清除，潜像存储器 |