发明申请
US20180030617A1 APPARATUS FOR MANUFACTURING A SECOND SUBSTRATE ON A FIRST SUBSTRATE INCLUDING REMOVAL OF THE FIRST SUBSTRATE
审中-公开
![APPARATUS FOR MANUFACTURING A SECOND SUBSTRATE ON A FIRST SUBSTRATE INCLUDING REMOVAL OF THE FIRST SUBSTRATE](/abs-image/US/2018/02/01/US20180030617A1/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: APPARATUS FOR MANUFACTURING A SECOND SUBSTRATE ON A FIRST SUBSTRATE INCLUDING REMOVAL OF THE FIRST SUBSTRATE
- 申请号:US15641746 申请日:2017-07-05
- 公开(公告)号:US20180030617A1 公开(公告)日:2018-02-01
- 发明人: Sam-mook KANG , Jun-youn KIM , Young-jo TAK , Mi-hyun KIM , Young-soo PARK
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 优先权: KR10-2016-0094831 20160726
- 主分类号: C30B25/16
- IPC分类号: C30B25/16 ; C23C16/52 ; C23C14/54 ; C23C14/06 ; C23C16/30 ; C30B29/40 ; C30B25/18 ; C23C14/22
摘要:
An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.