![POLARITONIC HOT ELECTRON INFRARED PHOTODETECTOR](/abs-image/US/2018/01/11/US20180013031A1/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: POLARITONIC HOT ELECTRON INFRARED PHOTODETECTOR
- 申请号:US15644216 申请日:2017-07-07
- 公开(公告)号:US20180013031A1 公开(公告)日:2018-01-11
- 发明人: Edward Sachet , Jon-Paul Maria , Christopher Shelton
- 申请人: North Carolina State University
- 主分类号: H01L31/112
- IPC分类号: H01L31/112 ; G02B5/00 ; G01J1/44 ; H01L31/0296 ; G01J1/04
摘要:
Polaritonic hot electron infrared photodetector that detect infrared radiation. In one implementation, the polaritonic hot electron infrared photodetector includes a first contact layer, a second contact layer, a first dielectric layer, a second dielectric layer, and a conductor layer. The first dielectric layer is coupled between the first contact layer and the second contact layer. The second dielectric layer is coupled between the first dielectric layer and the second contact layer. The conductor layer is coupled between the first dielectric layer and the second dielectric layer. Infrared radiation incident upon the conductor layer is operable to create hot carriers that are injected from a conduction band of the conductor layer to a conduction band of the second contact layer.
公开/授权文献:
- US10158040B2 Polaritonic hot electron infrared photodetector 公开/授权日:2018-12-18
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L31/00 | 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件 |
--------H01L31/02 | .零部件 |
----------H01L31/10 | ..特点在于至少有一个电位跃变势垒或表面势垒的,例如光敏晶体管 |
------------H01L31/101 | ...对红外、可见或紫外辐射敏感的器件 |
--------------H01L31/112 | ....以场效应工作为特征的,如结型场效应光敏晶体管 |