
基本信息:
- 专利标题: High-Precision Shadow-Mask-Deposition System and Method Therefor
- 申请号:US15655544 申请日:2017-07-20
- 公开(公告)号:US20170342543A1 公开(公告)日:2017-11-30
- 发明人: Amalkumar P. GHOSH , Fridrich VAZAN , Munisamy ANANDAN , Evan DONOGHUE , Ilyas I. KHAYRULLIN , Tariq ALI , Kerry TICE
- 申请人: eMagin Corporation
- 主分类号: C23C14/04
- IPC分类号: C23C14/04 ; C23C14/30 ; C23C14/50 ; C23C14/54
摘要:
A direct-deposition system forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. Prior to reaching the shadow mask, vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. Vaporized atoms that pass through the shadow mask exhibit little or no lateral spread after passing through through-holes and the material deposits on the substrate in a pattern that has very high fidelity with the through-hole pattern of the shadow mask.