发明申请
US20170330745A1 APPARATUS FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL, METHOD FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL USING THE APPARATUS, AND ALUMINUM NITRIDE SINGLE CRYSTAL
审中-公开
基本信息:
- 专利标题： APPARATUS FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL, METHOD FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL USING THE APPARATUS, AND ALUMINUM NITRIDE SINGLE CRYSTAL
- 申请号：US15525502 申请日：2015-11-09
- 公开(公告)号：US20170330745A1 公开(公告)日：2017-11-16
- 发明人： Toru NAGASHIMA , Masayuki FUKUDA
- 申请人： TOKUYAMA CORPORATION
- 申请人地址： JP Shunan-shi, Yamaguchi
- 专利权人： TOKUYAMA CORPORATION
- 当前专利权人： TOKUYAMA CORPORATION
- 当前专利权人地址： JP Shunan-shi, Yamaguchi
- 优先权： JP2014-228482 20141110; JP2015-101281 20150518
- 国际申请： PCT/JP2015/081492 WO 20151109
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C30B29/40
摘要：
An apparatus for manufacturing a group III nitride single crystal including: a reaction vessel including a reaction area, wherein in the reaction area, a group III source gas and a nitrogen source gas are reacted such that a group III nitride crystal is grown on a substrate; a susceptor arranged in the reaction area and supporting the substrate; a group III source gas supply nozzle supplying the group III source gas to the reaction area; and a nitrogen source gas supply nozzle supplying the nitrogen source gas to the reaction area, wherein the nitrogen source gas supply nozzle is configured to supply the nitrogen source gas and at least one halogen-based gas selected from the group consisting of a hydrogen halide gas and a halogen gas to the reaction area.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |